Specifications
| Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 32 A |
| Maximum Drain Source Voltage | 60 V |
| Maximum Drain Source Resistance | 45 mΩ |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Transistor Configuration | Single |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Category | Power MOSFET |
| Maximum Power Dissipation | 79 W |
| Typical Input Capacitance @ Vds | 800 pF@ 25 V |
| Typical Turn-Off Delay Time | 60 ns |
| Minimum Operating Temperature | -55 °C |
| Width | 4.7mm |
| Typical Gate Charge @ Vgs | 15 nC @ 5 V |
| Height | 16.3mm |
| Series | QFET |
| Maximum Operating Temperature | +175 °C |
| Length | 10.67mm |
| Dimensions | 10.67 x 4.7 x 16.3mm |
| Transistor Material | Si |
| Typical Turn-On Delay Time | 15 ns |
| Number of Elements per Chip | 1 |
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