BUZ80FI (N-CHANNEL)

Additional Information

N-Channel Power MOS Transistors 
Package: ISOWATT220 

Features: 

– Avalanche Ruggedness Technology 
– 100% Avalanche Tested 
– Repetitive Avalanche Data @ 100C 
– Low Input Capacitance 
– Low Gate Charge 

Description / Additional Information:

 Maximum Ratings 
Drain-source Voltage (VGS = 0): 800V 
Drain- gate Voltage (RGS = 20 kΩ): 800V 
Gate-source Voltage: 20V 
Drain Current (continuous): 
– TC = 25 C: 2.1A 
– TC = 100C: 1.3A 
Drain Current (pulsed): 13A 
Total Dissipation @ TC = 25 C: 40W 
Derating Factor: 0.32W/C 
Insulation Withstand Voltage (DC): 2000V 
Storage Temperature: -65C to 150C 
Max. Operating Junction Temperature: 150C 

Applications: 
– High current, High Speed Switching 
– Switch mode Power Supplies (SMPS) 
– Consumer and Industrial Lighting 
– DC-AC Inverters for Welding Equipment and UPS’s 

Manufactured by: ST Microelectronics 
Part Number: BUZ80FI