IRF9540N (P-CHANNEL)
IRF9540N, P-Channel, MOSFET (23 Amp)
- Package: TO-220
- Drain-to-Source Breakdown Voltage: -100 V
- Gate-to-Source Breakdown Voltage: +/- 20 V
- Continuous Drain Current: -23 A
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature: 175°C
- Pin Spacing Pitch: 2.54mm (0.1in)
- Hole Diameter: 3.8mm (0.15in)
- Weight: 2g (0.07oz)
IRF9540N, P Channel FET, 100V, 19A, 125W
Product description:
You must be logged in to post a review.
Related products
2SC945
IXFH50N20 (N-CHANNEL)
KP100A
N-Channel MOSFET- FQP30N06L
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
TIP33B
TIP35C
NPN Power Transistors, STMicroelectronics
NPN Transistor, 25 A, 100 V, 3-Pin TO-247
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Reviews
There are no reviews yet.