MOSFET
2N7000-N-Channel-MOSFET
60V 0.2A 2N7000 TO-92 MOSFET N-CHANNEL
This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
AUIRF9Z34N (P-CHANNEL)
BUZ80FI (N-CHANNEL)
IRF4905 (P-CHANNEL)
IRF4905PBF, TO-220, MOSFET, P-CHANNEL, FIELD EFFECT, 74A, 55V, 200W
The IRF4905PBF from International Rectifier is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
IRF9540N (P-CHANNEL)
IRF9540N, P-Channel, MOSFET (23 Amp)
Specifications:
- Package: TO-220
- Drain-to-Source Breakdown Voltage: -100 V
- Gate-to-Source Breakdown Voltage: +/- 20 V
- Continuous Drain Current: -23 A
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature: 175°C
- Pin Spacing Pitch: 2.54mm (0.1in)
- Hole Diameter: 3.8mm (0.15in)
- Weight: 2g (0.07oz)
IXFH50N20 (N-CHANNEL)
IXFH50N20 50A 200V N-Channel Power MosFET Transistor
Manufacturer: IXYS
Part Number: IXFH50N20
Amps: 50
Voltage: 200
Watts: 300
Ohms: .045
Package: TO-247
Mounting: Through Hole
Lead/Terminal Type: Straight
Number Leads/Terminals: 3
Color: Black
Temperature: 150
RoHS Compliant: Yes
Termination Method: Solder
N-Channel MOSFET- FQP30N06L
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
NDP6020P (P-CHANNEL)
If you’ve ever wondered how to control high current devices from a low-power microcontroller, a MOSFET is what you need. The NDP6020P is a very common MOSFET with very low on-resistance and a control voltage (aka gate voltage) that is compatible with most 5V and 3.3v microcontroller or mechanical switches. This allows you to control high-power devices with very low-power control mechanisms.