Showing all 11 results

2N7000-N-Channel-MOSFET

60V 0.2A 2N7000 TO-92 MOSFET N-CHANNEL 

This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

AUIRF9Z34N (P-CHANNEL)

AUIRF9Z34N, Power MOSFET, 55V, 19A, (TO-220)

Features:

Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

BUZ80FI (N-CHANNEL)

BUZ80FI N-Channel Power MOS Transistor ST Microelectronics

Manufacturer: ST Microelectronics Part Number: BUZ80FI Package: ISOWATT220 Number Leads/Terminals: 3

IRF3415 (N-CHANNEL)

 IRF3415PBF Manufactured by INFINEONRECTIFIER, IRF3415PBF, MOSFET, N, 150V, 43A, TO-220

IRF4905 (P-CHANNEL)

IRF4905PBF, TO-220, MOSFET, P-CHANNEL, FIELD EFFECT,  74A,  55V, 200W

The IRF4905PBF from International Rectifier is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.

IRF9540N (P-CHANNEL)

IRF9540N, P-Channel, MOSFET (23 Amp)
Specifications:
  • Package: TO-220
  • Drain-to-Source Breakdown Voltage: -100 V
  • Gate-to-Source Breakdown Voltage: +/- 20 V
  • Continuous Drain Current: -23 A
  • Minimum Operating Temperature: -55°C
  • Maximum Operating Temperature: 175°C
  • Pin Spacing Pitch: 2.54mm (0.1in)
  • Hole Diameter: 3.8mm (0.15in)
  • Weight: 2g (0.07oz)

IXFH50N20 (N-CHANNEL)

IXFH50N20 50A 200V N-Channel Power MosFET TransistorManufacturer: IXYS Part Number: IXFH50N20 Amps: 50 Voltage: 200 Watts: 300 Ohms: .045 Package: TO-247 Mounting: Through Hole Lead/Terminal Type: Straight Number Leads/Terminals: 3 Color: Black Temperature: 150 RoHS Compliant: Yes Termination Method: Solder

N-Channel MOSFET- FQP30N06L

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

NDP6020P (P-CHANNEL)

If you’ve ever wondered how to control high current devices from a low-power microcontroller, a MOSFET is what you need. The NDP6020P is a very common MOSFET with very low on-resistance and a control voltage (aka gate voltage) that is compatible with most 5V and 3.3v microcontroller or mechanical switches. This allows you to control high-power devices with very low-power control mechanisms.