2N2906

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Overview

2N2906 Bipolar Transistor

PNP Silicon General Purpose Amplifiers and Switches

Detailed Description

 

Characteristics of the 2N2906 bipolar transistor

  • Type -PNP
  • Collector-Emitter Voltage: -40 V
  • Collector-Base Voltage: -60 V
  • Emitter-Base Voltage: -5 V
  • Collector Current: -0.6 A
  • Collector Dissipation – 0.4 W
  • DC Current Gain (hfe) – 40 to 120
  • Transition Frequency – 200 MHz
  • Operating and Storage Junction Temperature Range -65 to +200 Â°C
  • Package – TO-18

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