2N7000 TMOS FET N-Channel Transistor
Transistor Polarity: N Channel
Continuous Drain Current Id: 200mA
Drain Source Voltage Vds: 60V
On Resistance Rds(on): 1.8ohm
Rds(on) Test Voltage Vgs: 4.5V
Threshold Voltage Vgs: 2.1V
Power Dissipation Pd: 400mW
Transistor Case Style: TO-92
No. of Pins: 3Pins
Operating Temperature Max: 150°C
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Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
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