2N7000-N-Channel-MOSFET
60V 0.2A 2N7000 TO-92 MOSFET N-CHANNEL
This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Description
2N7000 TMOS FET N-Channel Transistor
Product Information:
Transistor Polarity: N Channel
Continuous Drain Current Id: 200mA
Drain Source Voltage Vds: 60V
On Resistance Rds(on): 1.8ohm
Rds(on) Test Voltage Vgs: 4.5V
Threshold Voltage Vgs: 2.1V
Power Dissipation Pd: 400mW
Transistor Case Style: TO-92
No. of Pins: 3Pins
Operating Temperature Max: 150°C
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