2N7000-N-Channel-MOSFET

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Overview

60V 0.2A 2N7000 TO-92 MOSFET N-CHANNEL

This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Detailed Description

2N7000 TMOS FET N-Channel Transistor

Product Information:

Transistor Polarity:  N Channel
Continuous Drain Current Id:  200mA
Drain Source Voltage Vds:  60V
On Resistance Rds(on):  1.8ohm
Rds(on) Test Voltage Vgs:  4.5V
Threshold Voltage Vgs:  2.1V
Power Dissipation Pd: 400mW
Transistor Case Style:  TO-92
No. of Pins:  3Pins
Operating Temperature Max:  150°C