Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383 and 2SC1384
■ Features
● Complementary pair with 2SC1383 and 2SC1384.
● Allowing supply with the radial taping
2SA683
2SA683 for low-frequency power amplification and driver amplification. Complementary to 2SC1383 and 2SC1384.
Complementary pair with 2SC1383 and 2SC1384
TO-92 package.
Compare
Description
Reviews (0)
You must be logged in to post a review.
Shipping & Delivery
Related products
IRF4905 (P-CHANNEL)
IRF4905PBF, TO-220, MOSFET, P-CHANNEL, FIELD EFFECT, 74A, 55V, 200W
The IRF4905PBF from International Rectifier is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
IRF9540N (P-CHANNEL)
IRF9540N, P-Channel, MOSFET (23 Amp)
Specifications:
- Package: TO-220
- Drain-to-Source Breakdown Voltage: -100 V
- Gate-to-Source Breakdown Voltage: +/- 20 V
- Continuous Drain Current: -23 A
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature: 175°C
- Pin Spacing Pitch: 2.54mm (0.1in)
- Hole Diameter: 3.8mm (0.15in)
- Weight: 2g (0.07oz)
TIP33B
Commonly used for general–purpose power amplifier and switching applications.
• 10 A Collector Current
• Low Leakage Current — ICEO = 0.7 mA @ 60 V
• Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MStandard Casing package:
CASE 340D–01
TO–218AC
Reviews
There are no reviews yet.