2SA966

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Overview

2SA966 TRANSISTOR (PNP)
FEATURE:

Power dissipation: PCM : 0.9 W(Tamb=25℃)
Collector current: ICM : -1.5 A
Collector-base voltage: V(BR)CBO : -30 V
Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃

Detailed Description

 

Characteristics of the 2SA966 bipolar transistor

  • Type – PNP
  • Collector-Emitter Voltage: -30 V
  • Collector-Base Voltage: -30 V
  • Emitter-Base Voltage: -5 V
  • Collector Current: -1.5 A
  • Collector Dissipation – 0.9 W
  • DC Current Gain (hfe) – 100 to 320
  • Transition Frequency – 120 MHz
  • Operating and Storage Junction Temperature Range -55 to +150 °C
  • Package – TO-92MOD

Replacement and equivalent transistor for the 2SA966

You can replace the 2SA966 with the 2SA1273, 2SA928A, 2SB892, 2SB985, KSA928A, KTA1273, KTA1282 or STB1277

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