Additional Information
N-Channel Power MOS Transistors
Package: ISOWATT220
Features:
– Avalanche Ruggedness Technology
– 100% Avalanche Tested
– Repetitive Avalanche Data @ 100C
– Low Input Capacitance
– Low Gate Charge
Description / Additional Information:
Maximum Ratings
Drain-source Voltage (VGS = 0): 800V
Drain- gate Voltage (RGS = 20 kΩ): 800V
Gate-source Voltage: 20V
Drain Current (continuous):
– TC = 25 C: 2.1A
– TC = 100C: 1.3A
Drain Current (pulsed): 13A
Total Dissipation @ TC = 25 C: 40W
Derating Factor: 0.32W/C
Insulation Withstand Voltage (DC): 2000V
Storage Temperature: -65C to 150C
Max. Operating Junction Temperature: 150C
Applications:
– High current, High Speed Switching
– Switch mode Power Supplies (SMPS)
– Consumer and Industrial Lighting
– DC-AC Inverters for Welding Equipment and UPS’s
Manufactured by: ST Microelectronics
Part Number: BUZ80FI
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