IRF4905 (P-CHANNEL)
IRF4905PBF, TO-220, MOSFET, P-CHANNEL, FIELD EFFECT, 74A, 55V, 200W
The IRF4905PBF from International Rectifier is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Description
Features
- Drain-Source Volt (Vds): -55V
- Gate-Source Volt (Vgs): 20V
- Drain Current (Id): -74A
- Power Dissipation (Ptot): 200W
- Type: P-Channel
Product Characteristics:
- Family: IRF4905
- Category: Power MOSFET
- Configuration: Single
- Maximum Power Dissipation: 200000mW
- Number of Elements per Chip: 1
- Channel Mode: Enhancement
- Channel Type: P
- Maximum Continuous Drain Current: 74A
- Maximum Drain Source Resistance: 0.02Ohm@10V
- Maximum Drain Source Voltage: 55V
- Maximum Gate Source Voltage: ±20V
- Typical Fall Time: 96ns
- Typical Gate Charge @ Vgs: 180nC(Max)@10V
- Typical Input Capacitance @ Vds: 3400pF@25V
- Typical Rise Time: 99ns
- Typical Turn-Off Delay Time: 61ns
- Typical Turn-On Delay Time: 18ns
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature: 175°C
- Mounting: Through Hole
- Pin_Count: 3
- Supplier Package: TO-220AB
- Product Width: 4.82mm(Max)
- Product Height: 9.02mm(Max)
- Product Length: 10.66mm(Max)
- Product Type: MOSFET
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Specifications:
- Package: TO-220
- Drain-to-Source Breakdown Voltage: -100 V
- Gate-to-Source Breakdown Voltage: +/- 20 V
- Continuous Drain Current: -23 A
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature: 175°C
- Pin Spacing Pitch: 2.54mm (0.1in)
- Hole Diameter: 3.8mm (0.15in)
- Weight: 2g (0.07oz)
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