IXFH50N20 (N-CHANNEL)

Additional Information

Power MOSFET Transistors 
N-Channel 

Features: 
– International standard packages 
– Low RDS (on) HDMOSTM process 
– Rugged polysilicon gate cell structure 
– Unclamped Inductive Switching (UIS) rated 
– Low package inductance (easy to drive and to protect) 
– Fast intrinsic Rectifier 

Drain to Source Voltage: 200V 
Current-Continuous Drain (Id) @ 25 Deg.C: 50.0A 
Drive Voltage (Max Rds On, Min Rds On): 10.0V 
Vgs(th) (Max) @ Id: 4.0V @ 4.0mA 
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10.0V 
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V 
Vgs (Max): +/-20V 
Power Dissipation: 300W 
Rds On (Max) @ Id, Vgs: 45.0milliohm @ 25A, 10V 
Operating Temperature: -55 to 150 Deg. C. 

Manufactured by: IXYS 
Part Number: IXFH50N20