Description
Specifications
| Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 230 mA |
| Maximum Drain Source Voltage | 45 V |
| Maximum Drain Source Resistance | 14 Ω |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Package Type | E-Line |
| Mounting Type | Through Hole |
| Transistor Configuration | Single |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Category | Small Signal |
| Maximum Power Dissipation | 700 mW |
| Maximum Operating Temperature | +150 °C |
| Height | 4.01mm |
| Typical Input Capacitance @ Vds | 60 pF@ 10 V |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 2.41mm |
| Dimensions | 4.77 x 2.41 x 4.01mm |
| Length | 4.77mm |
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