NDP6020P (P-CHANNEL)
If you’ve ever wondered how to control high current devices from a low-power microcontroller, a MOSFET is what you need. The NDP6020P is a very common MOSFET with very low on-resistance and a control voltage (aka gate voltage) that is compatible with most 5V and 3.3v microcontroller or mechanical switches. This allows you to control high-power devices with very low-power control mechanisms.
Description:
The NDP6020P is a useful P-Channel FET that is compatible with most 3.3V and 5V microcontrollers. it has a very low gate threshold voltage (VGSth) of 2V to provide s nice 8 Amps. As you increase the gate voltage to 3.3V or higher the full current capability is available.
“High-side” means you are placing this FET above the load, so it’s between the power supply (+) and the device (which in turn is connected to ground).
Specifications:
- Mounting Type – Through Hole
- FET Type – P-Channel
- Drain-to-Source Voltage (Vdss) – 20V
- Current – Continuous Drain (Id) @ 25° C – 24A
- Rds On (Max) @ Id, Vgs @ 25° C – 50 mOhm @ 12A, 4.5V
- Input Capacitance (Ciss) @ Vds – 1590pF @ 10V
- Power – Max – 60W
- Gate Charge (Qg) @ Vgs – 35nC @ 5V
- Package / Case – TO-220AB
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IRF9540N (P-CHANNEL)
- Package: TO-220
- Drain-to-Source Breakdown Voltage: -100 V
- Gate-to-Source Breakdown Voltage: +/- 20 V
- Continuous Drain Current: -23 A
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature: 175°C
- Pin Spacing Pitch: 2.54mm (0.1in)
- Hole Diameter: 3.8mm (0.15in)
- Weight: 2g (0.07oz)
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