You must be logged in to post a review.
TIP33B
Commonly used for general–purpose power amplifier and switching applications.
• 10 A Collector Current
• Low Leakage Current — ICEO = 0.7 mA @ 60 V
• Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5 A, f = 1.0 M
Standard Casing package:
CASE 340D–01
TO–218AC
Compare
Reviews (0)
Shipping & Delivery
Related products
2N7000-N-Channel-MOSFET
60V 0.2A 2N7000 TO-92 MOSFET N-CHANNEL
This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
IRF4905 (P-CHANNEL)
IRF4905PBF, TO-220, MOSFET, P-CHANNEL, FIELD EFFECT, 74A, 55V, 200W
The IRF4905PBF from International Rectifier is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
KP100A
KP100A (3CT) single-sided Spiral conventional Thyristor, Silicon controlled Thyristor, high quality Silicon rectifierRepetitive peak reverse Voltage: 1600V.
Average Forward Current : 100A
Model : KP100A. thread Diameter : 15.5mm/0.62 inch
Applications: Machine tool controls, electrolysis, electroplating, traction, battery chargers, motor controllers, welder Phase control.
TIP35C
NPN Power Transistors, STMicroelectronics
NPN Transistor, 25 A, 100 V, 3-Pin TO-247
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Reviews
There are no reviews yet.