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TIP33B
Commonly used for general–purpose power amplifier and switching applications.
• 10 A Collector Current
• Low Leakage Current — ICEO = 0.7 mA @ 60 V
• Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5 A, f = 1.0 M
Standard Casing package:
CASE 340D–01
TO–218AC
Categories: Electronic Parts, NPN
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IRF9540N, P-Channel, MOSFET (23 Amp)
Specifications:
- Package: TO-220
- Drain-to-Source Breakdown Voltage: -100 V
- Gate-to-Source Breakdown Voltage: +/- 20 V
- Continuous Drain Current: -23 A
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature: 175°C
- Pin Spacing Pitch: 2.54mm (0.1in)
- Hole Diameter: 3.8mm (0.15in)
- Weight: 2g (0.07oz)
IXFH50N20 (N-CHANNEL)
IXFH50N20 50A 200V N-Channel Power MosFET TransistorManufacturer: IXYS
Part Number: IXFH50N20
Amps: 50
Voltage: 200
Watts: 300
Ohms: .045
Package: TO-247
Mounting: Through Hole
Lead/Terminal Type: Straight
Number Leads/Terminals: 3
Color: Black
Temperature: 150
RoHS Compliant: Yes
Termination Method: Solder
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